********************************
* Copyright:                   *
* Vishay Intertechnology, Inc. *
********************************
*Jun 23, 2014
*ECN S14-1288, Rev. B
*File Name: Si2366DS_PS.txt and Si2366DS_PS.lib
*This document is intended as a SPICE modeling guideline and does not
*constitute a commercial product datasheet. Designers should refer to the
*appropriate datasheet of the same number for guaranteed specification
*limits.
.SUBCKT Si2366DS D G S 
M1 3 GX S S NMOS W= 754647u L= 0.25u 
M2 S GX S D PMOS W= 754647u L= 2.187e-07 
R1 D 3 9.905e-03 TC=1.322e-02 2.864e-05 
CGS GX S 2.115e-10 
CGD GX D 1.170e-11 
RG G GY 3.5
RTCV 100 S 1e6 TC=-3.302e-04 -8.413e-07 
ETCV GX GY 100 200 1 
ITCV S 100 1u 
VTCV 200 S 1 
DBD S D DBD 
**************************************************************** 
.MODEL NMOS NMOS ( LEVEL = 3 TOX = 5e-8 
+ RS = 1.797e-02 KP = 2.76e-05 NSUB = 1.126e+17 
+ KAPPA = 1.067e-03 ETA = 2.473e-04 NFS = 1.064e+12 
+ LD = 0 IS = 0 TPG = 1) 
*************************************************************** 
.MODEL PMOS PMOS ( LEVEL = 3 TOX = 5e-8 
+NSUB = 2.353e+16 IS = 0 TPG = -1 ) 
**************************************************************** 
.MODEL DBD D ( 
+FC = 0.1 TT = 1.000e-08 T_MEASURED = 25 BV = 31 
+RS = 1.174e-02 N = 1.363e+00 IS = 8.958e-10 
+EG = 1.205e+00 XTI = 5.468e-01 TRS1 = 2.450e-03 
+CJO = 2.006e-10 VJ = 5.418e-01 M = 3.630e-01 ) 
.ENDS 
